56 Publications (Page 1 of 3)
2018
Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride.Ngoc My Duong, Hanh⋅Nguyen, Minh Anh Phan⋅Kianinia, Mehran⋅Ohshima, Takeshi⋅Abe, Hiroshi⋅Watanabe, Kenji⋅Taniguchi, Takashi⋅Edgar, James H⋅Aharonovich, Igor and Toth, MilosACS applied materials & interfaces, June 19, 2018.
| Journal Article
2008
HVPE of scandium nitride on 6H-SiC(0001)Edgar, James H⋅Bohnen, T. and Hageman, P. RJournal of Crystal Growth, vol. 310, (no. 6), pp. 1075-1080, 2008.
| Journal Article
Native oxide and hydroxides and their implications for bulk AlN crystal growthEdgar, James H⋅Du, L.⋅Nyakiti, L. and Chaudhuri, JharnaJournal of Crystal Growth, vol. 310, (no. 17), pp. 4002-4006, 2008.
| Journal Article
Seeded growth of AlN on SiC substrates and defect characterizationLu, P.⋅Edgar, James H⋅Cao, C.⋅Hohn, K.⋅Dalmau, R.⋅Schlesser, R. and Sitar, ZlatkoJournal of Crystal Growth, vol. 310, (no. 10), pp. 2464-2470, 2008.
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2007
Nucleation of AlN on SiC substrates by seeded sublimation growthLu, P.⋅Edgar, James H⋅Lee, R. G and Chaudhuri, JharnaJournal of Crystal Growth, vol. 300, (no. 2), pp. 336-342, 2007.
| Journal Article
Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layerGu, Z.⋅Edgar, James H⋅Raghothamachar, Balaji⋅Dudley, Michael⋅Zhuang, D.⋅Sitar, Zlatko and Coffey, D. WJournal of Materials Research, vol. 22, (no. 3), pp. 675-680, 2007.
| Journal Article
2006
Defect-selective etching of scandium nitride crystalsGu, Z.⋅Edgar, James H⋅Coffey, D. W⋅Chaudhuri, Jharna⋅Nyakiti, L.⋅Lee, R. G and Wen, J. GJournal of Crystal Growth, vol. 293, (no. 2), pp. 242-246, 2006.
| Journal Article
Interface properties of an AlN/(AlN)x(SiC)(1-x)/4H-SiC heterostructure.Edgar, James H⋅Gu, Z.⋅Gu, L. and Smith, David JPhysica Status Solidi (a), vol. 203, (no. 15), pp. 3720-3725, 2006.
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Oxidation of aluminum nitride for defect characterization.Edgar, James H⋅Gu, Z.⋅Taggart, K.⋅Chaudhuri, Jharna⋅Nyakiti, L. and Lee, R. GGaN, AlN, InN and Related Materials, vol. 892, pp. 505-510, 2006.
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Sublimation growth of aluminum nitride crystals.Gu, Z.⋅Du, L.⋅Edgar, James H⋅Nepal, N.⋅Lin, J. Y⋅Jiang, H. X and Witt, R.Journal of Crystal Growth, vol. 297, (no. 1), pp. 105-110, 2006.
| Journal Article
Thermal Oxidation of Aluminum Nitride PowderGu, Zheng⋅Edgar, James H⋅Wang, Chongmin and Coffey, Dorothy WAmerican Ceramic Society. Journal of the American Ceramic Society, vol. 89, (no. 7), pp. 2167, Jul 2006.
| Journal Article
2005
Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation.Liu, B.⋅Edgar, James H⋅Raghothamachar, B.⋅Dudley, Michael⋅Lin, J. Y⋅Jiang, H. X⋅Saraa, A. and Kuball, M.Materials Science and Engineering B, vol. 117, (no. 1), pp. 99-104, 2005.
| Journal Article
Sublimation Growth of Aluminum Nitride-Silicon Carbide Alloy Crystals on SiC (0001) SubstratesGu, Z.⋅Edgar, James H⋅Payzant, E. A⋅Meyer, H. M⋅Walker, L. R⋅Sarua, A. and Kuball, M.GaN, AlN, InN and Their Alloys, vol. 831, pp. 95-100, 2005.
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Thermal Oxidation of Polycrystalline and Single Crystalline Aluminum Nitride WafersGu, Z.⋅Edgar, James H⋅Speakman, S. A⋅Blom, D.⋅Perrin, J. and Chaudhuri, JharnaJournal of Electronic Materials, vol. 34, (no. 10), pp. 1271-1279, 2005.
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Wet etching of GaN, AlN, and SiC: a reviewZhuang, D. and Edgar, James HMaterials Science and Engineering R, vol. 48, (no. 1), pp. 1-46, 2005.
| Journal Article
2004
Bulk AlN crystal growth by direct heating of the source using microwaves.Zhuang, D.⋅Edgar, James H⋅Liu, B.⋅Huey, H. E⋅Jiang, H. X⋅Lin, J. Y⋅Kuball, M.⋅Mogal, F.⋅Chaudhuri, Jharna and Rek, Z.Journal of Crystal Growth, vol. 262, (no. 1-4), pp. 168-174, 2004.
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Crystal growth and properties of scandium nitride.Gu, Zheng⋅Edgar, James H⋅Pomeroy, J.⋅Kuball, M. and Coffey, D. WJournal of Materials Science: Materials in Electronics, vol. 15, (no. 8), pp. 555-559, 2004.
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CRYSTAL GROWTH AND PROPERTIES OF SCANDIUM NITRIDEGu, Z.⋅Edgar, James H⋅Pomeroy, J.⋅Kuball, M. and Coffey, D. WJournal of Materials Science: Materials in Electronics, 2004.
| Journal Article
Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy.Zhuang, D.⋅Edgar, James H⋅Strojek, B.⋅Chaudhuri, Jharna and Rek, Z.Journal of Crystal Growth, vol. 262, (no. 1-4), pp. 89-94, 2004.
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Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk CrystalsRajasingam, A. S⋅Kuball, M.⋅Garro, N.⋅Sancho, O.⋅Cros, A.⋅Cantarero, A.⋅Olguin, D.⋅Liu, B.⋅Zhuang, D. and Edgar, James HGaN and Related Alloys--2003: as held at the 2003 MRS Fall Meeting; Boston, MA; USA; 1-5 Dec. 2003. 2004.
| Conference Proceeding
The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by SublimationLiu, B.⋅Edgar, James H⋅Gu, Z.⋅Zhuang, D.⋅Raghothamachar, B.⋅Dudley, Michael⋅Sarua, A.⋅Kuball, Martin and Meyer III, H. MMRS Internet Journal of Nitride Semiconductor Research, vol. 9, pp. 1, 2004.
| Journal Article
The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by SublimationLiu, B.⋅Edgar, James H⋅Gu, Z.⋅Zhuang, D.⋅Raghothamachar, B.⋅Dudley, Michael⋅Sarua, A.⋅Kuball, Martin and Meyer III, H. MMRS Internet Journal of Nitride Semiconductor Research, vol. 9, pp. 1, 2004.
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2002
A Global Growth Rate Model for Aluminum Nitride SublimationLiu, L. and Edgar, James HJournal of the Electrochemical Society (USA), vol. 149, (no. 1), pp. G12-G15, 2002.
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Wet Chemical Etching of AlN Single CrystalsZhuan, D.⋅Edgar, James H⋅Liu, Lianghong⋅Liu, B. and Walker, L.MRS Internet Journal of Nitride Semiconductor Research, vol. 7, pp. 1, 2002.
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