56 Publications (Page 3 of 3)
1994
EPITAXIAL GROWTH OF SiC ON SAPPHIRE SUBSTRATES WITH AN AlN BUFFER LAYERSywe, B. S⋅Yu, Z. J⋅Burckhard, S.⋅Edgar, James H and Chaudhuri, JharnaJournal of the Electrochemical Society, vol. 141, (no. 2), pp. 510-513, 1994.
| Journal Article
1992
ELECTRICAL AND COMPOSITIONAL PROPERTIES OF AlN-Si INTERFACESAhmed, A. U⋅Rys, A.⋅Singh, N.⋅Edgar, James H and Yu, Z. JJournal of the Electrochemical Society, vol. 139, (no. 4), pp. 1146-1151, 1992.
| Journal Article
Growth and characterization of GaN on sapphire and siliconYu, Z. J⋅Sywe, B. S⋅Ahmed, A. U and Edgar, James HJournal of Electronic Materials, vol. 21, (no. 3), pp. 383-7, 1992.
| Journal Article
1991
Application of oxidation to the structural characterization of SiC epitaxial filmsPOWELL, J. A⋅PETIT, J. B⋅Edgar, James H⋅JENKINS, I. G and MATUS, L. GApplied Physics Letters, vol. 59, pp. 183-185, 1991.
| Journal Article
Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafersPOWELL, J. A⋅PETIT, J. B⋅Edgar, James H⋅JENKINS, I. G and MATUS, L. GApplied Physics Letters, vol. 59, pp. 333-335, 1991.
| Journal Article
1987
The selective deposition of gallium-arsenide and aluminum-gallium - arsenide by laser-enhanced metalorganic chemical vapor deposition (Dissertation)Edgar, James H (1987).
