Edgar’s research is focused on the applications of chemical engineering principles to improve semiconductor processing. Specific areas of interest include crystal growth, epitaxy, and characterization of wide band gap semiconductors including group III nitrides (aluminum nitride and gallium nitride), silicon carbide, and boron compound semiconductors (boron nitride and icosahedral boron arsenide). Improvements in the quality of these semiconductors have made possible solid state ultraviolet light emitters (light emitting diodes and diode lasers), energy-saving high efficiency power electronics, neutron detectors, and nanophotonics.
Specific research interests include crystal growth and epitaxy of boron and nitrogen semiconductors including boron nitride, boron phosphide, and scandium nitride.
