56 Publications (Page 2 of 3)
2002
Wet Chemical Etching of AlN Single CrystalsZhuan, D.⋅Edgar, James H⋅Liu, Lianghong⋅Liu, B. and Walker, L.MRS Internet Journal of Nitride Semiconductor Research, vol. 7, pp. 1, 2002.
| Journal Article
Wet Chemical Etching of AlN Single CrystalsZhuan, D.⋅Edgar, James H⋅Liu, Lianghong⋅Liu, B. and Walker, L.MRS Internet Journal of Nitride Semiconductor Research, vol. 7, pp. 1, 2002.
| Journal Article
WET CHEMICAL ETCHING OF AlN SINGLE CRYSTALSZhuang, D.⋅Edgar, James H⋅Liu, L.⋅Liu, B. and Walker, L.MRS Internet J.Nitride Semicond.Res. Vol. 7, vol. 7, pp. 4, 2002.
| Journal Article
2001
Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC SubstratesLiu, Lianghong⋅Liu, B.⋅Shi, Y. and Edgar, James HMRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001.
| Journal Article
Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC SubstratesLiu, Lianghong⋅Liu, B.⋅Shi, Y. and Edgar, James HMRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001.
| Journal Article
GROWTH MODE AND DEFECTS IN ALUMINUM NITRIDE SUBLIMED ON (0001) 6H-SiC SUBSTRATESLiu, L.⋅Liu, B.⋅Shi, Y. and Edgar, James HMRS Internet J.Nitride Semicond.Res. Vol. 6, vol. 6, pp. 7, 2001.
| Journal Article
MOVPE Reactor for Deposition of Wide Band Gap SemiconductorsEdgar, James H2001.
| Journal Article
MOVPE Reactor for Deposition of Wide Band Gap SemiconductorsEdgar, James H2001.
| Journal Article
New Technique for Sublimation Growth of AlN Single CrystalsShi, Y.⋅Liu, B.⋅Liu, Lianghong⋅Edgar, James H⋅Payzant, E. A⋅Haves, J. M and Kuball, MartinMRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001.
| Journal Article
New Technique for Sublimation Growth of AlN Single CrystalsShi, Y.⋅Liu, B.⋅Liu, Lianghong⋅Edgar, James H⋅Payzant, E. A⋅Haves, J. M and Kuball, MartinMRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001.
| Journal Article
New Technique for Sublimation Growth of AlN Single CrystalsShi, Y.⋅Liu, B.⋅Liu, Lianghong⋅Edgar, James H⋅Payzant, E. A⋅Haves, J. M and Kuball, MartinMRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001.
| Journal Article
NEW TECHNIQUE FOR SUBLIMATION GROWTH OF AlN SINGLE CRYSTALSShi, Y.⋅Liu, B.⋅Liu, L.⋅Edgar, James H⋅Payzant, E. A and Hayes, J. MMRS Internet J.Nitride Semicond.Res. Vol. 6, vol. 6, pp. 5, 2001.
| Journal Article
2000
MOCVD GROWTH OF CUBIC GaN ON 3C-SiC DEPOSITED ON Si (100) SUBSTRATESWei, C. H⋅Xie, Z. Y⋅Li, L. Y⋅Yu, Q. M and Edgar, James HJournal of Electronic Materials, vol. 29, (no. 3), pp. 317-321, 2000.
| Journal Article
MOCVD growth of cubic GaN on 3C-SiC deposted on Si(100)substratesC.H. Wei, Z.Y. Xie, L.Y. Li, Q.M. Yu, and J.H. Edgar and Edgar, James H(pp. 317). 2000
Role of trimethylgallium flow during nucleation layer deposition in the optimization of epitaxial GaN filmsWei, C. H⋅Edgar, James H⋅Ignatiev, C. and Chaudhuri, JharnaThin Solid Films, vol. 360, (no. 1-2), pp. 34-38, 2000.
| Journal Article
Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVDXie, Zy⋅Wei, C. H⋅Chen, S. F⋅Jiang, Shaoyi and Edgar, James HJournal of Electronic Materials, vol. 29, (no. 4), pp. 411, Apr 2000.
| Journal Article
TEMPERATURE DEPENDENCE OF THE PHONONS OF BULK AlNHayes, J. M⋅Kuball, M.⋅Shi, Y. and Edgar, James HJpn.J.Appl.Phys, vol. 39, (no. 7B), pp. L710-L712, 2000.
| Journal Article
Transport effects in the sublimation of growth of aluminum nitrideEdgar, James H and Liu, L.Journal of Crystal Growth (Netherlands), vol. 220, (no. 3), pp. 243-253, 2000.
| Journal Article
1999
Effects of surface preparation on epitaxial GaN on 6H-SiC deposited via MOCVDXie, Z. Y⋅Wei, C. H⋅Li, L. Y⋅Edgar, James H⋅Chaudhuri, Jharna and Ignatiev, C.GaN and related alloys; Proceedings of the Symposium, Boston, MA; UNITED STATES; 30 Nov.-4 Dec. 1998. 1999.
| Conference Proceeding
EFFECTS OF SURFACE PREPARATION ON EPITAXIAL GaN ON 6H-SiC DEPOSITED VIA MOCVDXie, Z. Y⋅Wei, C. H⋅Li, L. Y⋅Edgar, James H⋅Chaudhuri, Jharna and Ignatiev, C.1999.
| Journal Article
Growth and characterization of B(x)Ga(1-x)N on 6H-SiC (0001) by MOVPEWei, C. H⋅Xie, Z. Y⋅Edgar, James H⋅Zeng, K. C⋅Lin, J. Y⋅Jiang, H. X⋅Ignatiev, C.⋅Chaudhuri, Jharna and Braski, D. NGaN and related alloys; Proceedings of the Symposium, Boston, MA; UNITED STATES; 30 Nov.-4 Dec. 1998. 1999.
| Conference Proceeding
1998
Selective epitaxial growth of silicon carbide on SiO2 masked Si(100): the effects of temperatureJ.H. Edgar, Y. Gao, J. Chaudhuri, S. Cheema, S.A. Casalnuovo, and P.W. Yip and Edgar, James H(pp. 201). 1998
The effects of the simultaneous addition of diborane and ammonia on the hot-filament assisted chemical vapor deposition of diamond II Characterization of diamond and BCN filmZ.Y. Xie, J.H. Edgar, T.L. McCormick, and M.V. Sidorov and Edgar, James H(pp. 1357). 1998
1997
c-Boron-aluminum nitride alloys prepared by ion-beam assisted depositionEdgar, James H⋅Smith, D. T⋅Eddy, C. R⋅Carosella, C. A and Sartwell, B. DThin Solid Films, vol. 298, (no. 1-2), pp. 33-38, 1997.
| Journal Article
HARDNESS, ELASTIC MODULUS AND STRUCTURE OF INDIUM NITRIDE THIN FILMS ON AlN-NUCLEATED SAPPHIRE SUBSTRATESEdgar, James H⋅WCA⋅Wei, C. H⋅Smith, D. T⋅Kistenmacher, T. J and Bryden, W. AJournal of Materials Science: Materials in Electronics, vol. 8, (no. 5), pp. 307-312, 1997.
| Journal Article