43 Publications (Page 1 of 2)
2010
Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures
Xu, Ziyan⋅Xu, Ziyan⋅Niu, Guofu⋅Niu, Guofu⋅Luo, Lan⋅Luo, Lan⋅Cressler, John D⋅Cressler, John D⋅Alles, Michael L⋅Alles, Michael L⋅Reed, Robert⋅Reed, Robert⋅Mantooth, H Alan⋅Mantooth, HAlan⋅Holmes, James⋅Holmes, James⋅Marshall, Paul W and Marshall, Paul W
IEEE Transactions on Nuclear Science, vol. 57, (no. 6), pp. 3206-3211, 2010. | Journal Article
2008
Miniaturized Data Acquisition System for Extreme Temperature Environments
Berger, Richard⋅Garbos, Raymond⋅Cressler, John D⋅Mojarradi, Mohammad⋅Peltz, Leora⋅Blalock, Ben⋅Johnson, Wayne⋅Niu, Guofu⋅Dai, Fa F⋅Mantooth, Alan⋅Holmes, Jim⋅Alles, Mike and McClusky, Patrick
IEEE Aerospace Conference Proceedings 2008, 2008. | Journal Article
2007
A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration
Wei, Xiaoyun⋅Niu, Guofu⋅Sweeney, S.⋅Liang, Qingqing⋅Wang, Xudong and Taylor, S.
IEEE Transactions on Electron Devices, vol. 54, (no. 10), pp. 2706-2714, 2007. | Journal Article
2006
Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit
Xia, Kejun⋅Niu, Guofu⋅Sheridan, D. C and Sweeney, S. L
IEEE Transactions on Electron Devices, vol. 53, (no. 3), pp. 515-522, 2006. | Journal Article
2005
Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)
Marshall, P.⋅Carts, M.⋅Currie, S.⋅Reed, R.⋅Randall, B.⋅Fritz, K.⋅Kennedy, K.⋅Berg, M.⋅Krithivasan, R.⋅Siedleck, C.⋅Ladbury, R.⋅Marshall, C.⋅Cressler, John D⋅Niu, Guofu⋅LaBel, K. and Gilbert, Barry K
IEEE Transactions on Nuclear Science, vol. 52, (no. 6), pp. 2446-2454, 2005. | Journal Article
 
Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications
Niu, Guofu
Proceedings of the IEEE, vol. 93, (no. 9), 2005. | Journal Article
 
RF Noise Modeling in SiGe HBTs
Niu, Guofu⋅Xia, Kejun⋅Sheridan, David and Sweeney, Susan
Noise and Fluctuations, vol. 780, pp. 247-252, 2005. | Journal Article
 
Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs
Niu, Guofu⋅Yang, Hua⋅Varadharajaperumal, M.⋅Shi, Yun⋅Cressler, J. D⋅Krithivasan, R.⋅Marshall, P. W and Reed, R.
IEEE Transactions on Nuclear Science, vol. 52, (no. 6), pp. 2153-2157, 2005. | Journal Article
2003
3-D simulation of heavy-ion induced charge collection in SiGe HBTs
Varadharajaperumal, M.⋅Niu, Guofu⋅Krithivasan, R.⋅Cressler, J. D⋅Reed, R. A⋅Marshall, P. W⋅Vizkelethy, G.⋅Dodd, P. E and Joseph, A. J
IEEE Transactions on Nuclear Science, vol. 50, (no. 6), pp. 2191-2198, 2003. | Journal Article
 
Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Chen, Kevin J and Niu, Guofu
IEEE Journal of Solid-State Circuits, vol. 38, (no. 2), pp. 312-318, 2003. | Journal Article
 
Substrate current based avalanche multiplication measurement in 120 GHz SiGe HBTs
Pan, Jun⋅Niu, Guofu⋅Tang, Jin⋅Shi, Yun⋅Joseph, A. J and Harame, D. L
IEEE Electron Device Letters, vol. 24, (no. 12), pp. 736-738, 2003. | Journal Article
2002
A comparison of SEU tolerance in high-speed SiGe HBT digital logic designed with multiple circuit architectures
Niu, Guofu⋅Krithivasan, R.⋅Cressler, John D⋅Riggs, P. A⋅Randall, B. A⋅Marshall, P. W⋅Reed, R. A and Gilbert, Barry K
IEEE Transactions on Nuclear Science (0018-9499), vol. 49, (no. 6), pp. 3107-3114, 2002. | Journal Article
 
Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers
Liang, Qingqing⋅Niu, Guofu⋅Cressler, John D⋅Taylor, Stewart and Harame, David L
IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 517-520, 2002. | Journal Article
 
Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers
Liang, Qingqing⋅Niu, Guofu⋅Cressler, John D⋅Taylor, Stewart and Harame, David L
IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 517-520, 2002. | Journal Article
 
Low-frequency noise figures-of-merit in RF SiGe HBT technology
Tang, Jin⋅Niu, Guofu⋅Jin, Zhenrong⋅Cressler, John D⋅Zhang, Shiming⋅Joseph, Alvin J and Harame, David L
IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 179-182, 2002. | Journal Article
 
Low-frequency noise figures-of-merit in RF SiGe HBT technology
Tang, Jin⋅Niu, Guofu⋅Jin, Zhenrong⋅Cressler, John D⋅Zhang, Shiming⋅Joseph, Alvin J and Harame, David L
IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 179-182, 2002. | Journal Article
 
Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications
Tang, Jin⋅Niu, Guofu⋅Jin, Zhenrong⋅Cressler, John D⋅Zhang, Shiming⋅Joseph, A. J and Harame, D. L
IEEE Transactions on Microwave Theory and Techniques, vol. 50, (no. 11), pp. 2467-2473, 2002. | Journal Article
 
Noise-gain tradeoff in RF SiGe HBTs
Niu, Guofu⋅Cressler, John D⋅Zhang, Shiming⋅Joseph, Alvin and Harame, David
Solid-State Electronics, vol. 46, (no. 9), pp. 1445-1451, 2002. | Journal Article
 
The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs
Zhang, Shiming⋅Niu, Guofu⋅Cressler, John D⋅Joseph, A. J⋅Freeman, G. and Harame, D. L
IEEE Transactions on Electron Devices, vol. 49, (no. 3), pp. 429-435, 2002. | Journal Article
2001
A unified approach to RF and microwave noise parameter modeling in bipolar transistors
Niu, Guofu⋅Cressler, John D⋅Zhang, S.⋅Ansley, W. E⋅Webster, C. S and Harame, D. L
IEEE Transactions on Electron Devices, vol. 48, (no. 11), pp. 2568-2574, 2001. | Journal Article
 
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs
Niu, Guofu⋅Juraver, Jean B⋅Borgarino, Mattia⋅Jin, Zhenrong⋅Cressler, John D⋅Plana, Robert⋅Llopis, Olivier⋅Mathew, Suraj⋅Zhang, Shiming⋅Clark, Steve and Joseph, Alvin J
SOLID-STATE ELECTRON, vol. 45, (no. 1), pp. 107-112, 2001. | Journal Article
 
Modeling of single-event effects in circuit-hardened high-speed SiGe HBT logic
Niu, Guofu⋅Marshall, C.⋅Krithivasan, R.⋅Cressler, John D⋅Marshall, P.⋅Reed, R. and Harame, D. L
IEEE Transactions on Nuclear Science, vol. 48, (no. 6), pp. 1849-1854, 2001. | Journal Article
 
RF linearity characteristics of SiGe HBTs
Niu, Guofu⋅Liang, Q.⋅Cressler, John D⋅Webster, C. S and Harame, D. L
IEEE Transactions on Microwave Theory and Techniques, vol. 49, (no. 9), pp. 1558-1565, 2001. | Journal Article
 
Transistor noise in SiGe HBT RF technology
Niu, Guofu⋅Jin, Z.⋅Cressler, John D⋅Rapeta, R.⋅Joseph, A. J and Harame, D.
IEEE Journal of Solid-State Circuits, vol. 36, (no. 9), pp. 1424-1427, 2001. | Journal Article
2000
A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies
Zhang, S.⋅Niu, Guofu⋅Cressler, John D⋅Mathew, S. J⋅Gogineni, U.⋅Clark, S. D⋅Zampardi, P. and Pierson, R. L
IEEE Transactions on Nuclear Science, vol. 47, (no. 6), pp. 2521-2527, 2000. | Journal Article