43 Publications (Page 2 of 2)
2000
Channel resistance derivative method for effective channel length extraction in LDD MOSFET's
Niu, Guofu⋅Cressler, John D⋅Mathew, Suraj J and Subbanna, Seshu
IEEE Transactions on Electron Devices, vol. 47, (no. 3), pp. 648-650, 2000. | Journal Article
 
Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect
Niu, Guofu⋅Cressler, John D⋅Mathew, Suraj J and Subbanna, Seshu
SOLID-STATE ELECTRON, vol. 44, (no. 8), pp. 1507-1509, 2000. | Journal Article
 
Hot electron and hot hole degradation of UHV/CVD SiGe HBT's
Gogineni, Usha⋅Cressler, John D⋅Niu, Guofu and Harame, David L
IEEE Transactions on Electron Devices, vol. 47, (no. 7), pp. 1440-1448, 2000. | Journal Article
 
Noise modeling and SiGe profile design tradeoffs for RF applications
Niu, Guofu⋅Zhang, Shiming⋅Cressler, John D⋅Joseph, Alvin J⋅Fairbanks, John S⋅Larson, Lawrence E⋅Webster, Charles S⋅Ansley, William E and Harame, David L
IEEE Transactions on Electron Devices, vol. 47, (no. 11), pp. 2037-2044, 2000. | Journal Article
 
Noise modeling and SiGe profile design tradeoffs for RFapplications HBTs
Niu, Guofu⋅Zhang, Shiming⋅Cressler, John D⋅Joseph, A. J⋅Fairbanks, J. S⋅Larson, Lawrence E⋅Webster, C. S⋅Ansley, W. E and Harame, D. L
IEEE Transactions on Electron Devices, vol. 47, (no. 11), pp. 2037-2044, 2000. | Journal Article
 
Novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs
Niu, Guofu⋅Mathew, Suraj J⋅Cressler, John D and Subbanna, Seshu
SOLID-STATE ELECTRON, vol. 44, (no. 7), pp. 1187-1189, 2000. | Journal Article
 
Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs
Niu, Guofu⋅Cressler, John D⋅Shoga, M.⋅Jobe, K.⋅Chu, P. and Harame, D. L
IEEE Transactions on Nuclear Science, vol. 47, (no. 6), pp. 2682-2689, 2000. | Journal Article
1999
A new common-emitter hybrid-pi small-signal equivalent circuitfor bipolar transistors with significant neutral base recombination
Niu, Guofu⋅Cressler, John D⋅Gogineni, U. and Joseph, A. J
IEEE Transactions on Electron Devices, vol. 46, (no. 6), pp. 1166-1173, 1999. | Journal Article
 
Characterization and profile optimization of SiGe pFET's on silicon-on-sapphire
Mathew, Suraj J⋅Niu, Guofu⋅Dubbelday, Wadad B and Cressler, John D
IEEE Transactions on Electron Devices, vol. 46, (no. 12), pp. 2323-2332, 1999. | Journal Article
 
Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI)
Niu, Guofu⋅Cressler, John D⋅Mathew, Suraj J and Ahlgren, David C
IEEE Electron Device Letters, vol. 20, (no. 10), pp. 520-522, 1999. | Journal Article
 
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
Mathew, Suraj J⋅Niu, Guofu⋅Dubbelday, Wadad B⋅Cressler, John D⋅Ott, John A⋅Chu, Jack O⋅Mooney, Patricia M⋅Kavanagh, Karen L⋅Meyerson, Bernard S and Lagnado, Isaac
IEEE Electron Device Letters, vol. 20, (no. 4), pp. 173-175, 1999. | Journal Article
 
Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's
Niu, Guofu⋅Cressler, John D⋅Zhang, Shiming⋅Gogineni, Usha and Ahlgren, David C
IEEE Transactions on Electron Devices, vol. 46, (no. 5), pp. 1007-1015, 1999. | Journal Article
 
New common-emitter hybrid- pi small-signal equivalent circuit for bipolar transistors with significant neutral base recombination
Niu, Guofu⋅Cressler, John D⋅Gogineni, Usha and Joseph, Alvin J
IEEE Transactions on Electron Devices, vol. 46, (no. 6), pp. 1166-1173, 1999. | Journal Article
 
Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications
Niu, Guofu⋅Ansley, W. E⋅Zhang, Shiming⋅Cressler, J. D⋅Webster, C. S and Groves, R. A
IEEE Transactions on Electron Devices, vol. 46, (no. 8), pp. 1589-1598, 1999. | Journal Article
 
Optimization of SiGe HBT's for operation at high current densities
Joseph, Alvin J⋅Cressler, John D⋅Richey, David M and Niu, Guofu
IEEE Transactions on Electron Devices, vol. 46, (no. 7), pp. 1347-1354, 1999. | Journal Article
 
Total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology
Niu, Guofu⋅Cressler, John D⋅Mathew, Suraj J and Subbanna, Seshu
IEEE Transactions on Electron Devices, vol. 46, (no. 9), pp. 1912-1914, 1999. | Journal Article
1998
Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBTs
Niu, Guofu⋅Cressler, John D⋅Gogineni, U. and Harame, D. L
IEEE Electron Device Letters, vol. 19, (no. 8), pp. 288-290, 1998. | Journal Article
1997
Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Niu, Guofu⋅Chen, Kevin J⋅Chen, R. M⋅Ruan, G.⋅Waho, T.⋅Maezawa, K. and Yamamoto, Masafumi
PROC IEEE INT SYMP CIRCUITS SYST, vol. 3, pp. 1628-1631, 1997. | Journal Article