5 Publications
2002
Finding the optimum Al-Ti alloy composition for use as an ohmic contact to p-type SiC
Crofton, John⋅Mohney, Suzanne E⋅Williams, John R and Isaacs-Smith, T.
SOLID-STATE ELECTRON, vol. 46, (no. 1), pp. 109-113, 2002. | Journal Article
1998
HIGH TEMPERATURE STABILITY OF CHROMIUM BORIDE OHMIC CONTACTS TO p-TYPE 6H-SiC
Oder, Tom N⋅Williams, John R⋅Bozack, M. J⋅Iyer, V.⋅Mohney, Suzanne E and Crofton, John
J.Electron.Mater. Vol. 27, vol. 27, (no. 4), pp. 324-329, 1998. | Journal Article
 
IMPROVED OHMIC CONTACT TO n-TYPE 4H AND 6H-SiC USING NICHROME
Luckowski, E. D⋅Delucca, J. M⋅Williams, John R⋅Mohney, Suzanne E⋅Bozack, M. J and Isaacs-Smith, T.
J.Electron.Mater. Vol. 27, vol. 27, (no. 4), pp. 330-334, 1998. | Journal Article
 
REFRACTORY METAL BORIDE OHMIC CONTACTS TO p-TYPE 6H-SiC
Oder, Tom N⋅Williams, John R⋅Mohney, Suzanne E and Crofton, John
J.Electron.Mater. Vol. 27, vol. 27, (no. 1), pp. 12-16, 1998. | Journal Article
1996
Improved nickel silicide ohmic contacts to n-type 4H and 6H-SiC using nichrome
Lickowski, E. D⋅Williams, John R⋅Bozack, M. J⋅Isaacs-Smith, T. and Crofton, John
III-nitride, SiC and diamond materials for electronic devices; Proceedings of the Symposium, San Francisco, CA; UNITED STATES; 8-12 Apr. 1996. 1996. | Conference Proceeding