46 Publications (Page 1 of 2)
2022
Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
Das, Suman⋅Zheng, Yongju⋅Ahyi, Ayayi⋅Kuroda, Marcelo A and Dhar, Sarit
Materials, vol. 15, (no. 19), pp. 6736, Sep 28, 2022. | Journal Article
 
The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors
Wang, S.⋅Uprety, S.⋅Mirkhani, V.⋅Hanggi, D.⋅Yapabandara, K.⋅Khanal, M.P.⋅Ahyi, A.C.⋅Hamilton, M.C.⋅Sk, M.H. and Park, M.
Solid-state electronics, vol. 191, pp. 108270, May 2022. | Journal Article
2021
Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors
Jayawardhena, I. U⋅Ramamurthy, R. P⋅Morisette, D.⋅Ahyi, A. C⋅Thorpe, R.⋅Kuroda, M. A⋅Feldman, L. C and Dhar, S.
Journal of applied physics, vol. 129, (no. 7), Feb 21, 2021. | Journal Article
 
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors
Mirkhani, Vahid⋅Wang, Shiqiang⋅Yapabandara, Kosala⋅Sultan, Muhammad S⋅Khanal, Min P⋅Uprety, Sunil⋅Ozden, Burcu⋅Hassani, Ehsan⋅Schoenek, Benjamin V⋅Kim, Dong-Joo⋅Oh, Tae-Sik⋅Ahyi, Ayayi C⋅Dhar, Sarit⋅Hamilton, Michael C⋅Sk, Mobbassar H and Park, Minseo
Semiconductor science and technology, vol. 36, (no. 10), pp. 105011, Oct 2021. | Journal Article
 
High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors
Das, Suman⋅Isaacs-Smith, Tamara⋅Ahyi, Ayayi⋅Kuroda, Marcelo A and Dhar, Sarit
Journal of applied physics, vol. 130, (no. 22), pp. 225701, Dec 14, 2021. | Journal Article
2019
On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO
Mirkhani, Vahid⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Yapabandara, Kosala⋅Yapabandara, Kosala⋅Yapabandara, Kosala⋅Wang, Shiqiang⋅Wang, Shiqiang⋅Wang, Shiqiang⋅Khanal, Min Prasad⋅Khanal, Min Prasad⋅Khanal, Min Prasad⋅Uprety, Sunil⋅Uprety, Sunil⋅Uprety, Sunil⋅Sultan, Muhammad Shehzad⋅Sultan, Muhammad Shehzad⋅Sultan, Muhammad Shehzad⋅Ozden, Burcu⋅Ozden, Burcu⋅Ozden, Burcu⋅Ahyi, Ayayi Claude⋅Ahyi, Ayayi Claude⋅Ahyi, Ayayi Claude⋅Hamilton, Michael C⋅Hamilton, Michael C⋅Hamilton, Michael C⋅Sk, Mobbassar Hassan⋅Sk, Mobbassar Hassan⋅Sk, Mobbassar Hassan⋅Park, Minseo⋅Park, Minseo and Park, Minseo
Thin Solid Films, vol. 672, pp. 156, 2019-02-28. | Journal Article
 
Reliability Testing of SiC MOS Devices at 500°C
Ahyi, A. C⋅Dhar, S.⋅Dilli, Z.⋅Akturk, A.⋅Goldsman, N. and Ghanbari, A.
In 2019 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-4). IEEE. Mar 2019. | Conference Proceeding
2018
Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs
Zheng, Yong Ju⋅Dhar, Sarit⋅Isaacs-Smith, Tamara⋅Ahyi, Ayayi Claude⋅Zheng, Yong Ju⋅Dhar, Sarit⋅Isaacs-Smith, Tamara and Ahyi, Ayayi Claude
Materials Science Forum, vol. 924, pp. 505, 20180605. | Journal Article
 
Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)
Khanal, Min P⋅Khanal, Min P⋅Uprety, Sunil⋅Uprety, Sunil⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Wang, Shiqiang⋅Wang, Shiqiang⋅Yapabandara, Kosala⋅Yapabandara, Kosala⋅Hassani, Ehsan⋅Hassani, Ehsan⋅Isaacs-Smith, Tamara⋅Isaacs-Smith, Tamara⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Bozack, Michael J⋅Bozack, Michael J⋅Oh, Tae-Sik⋅Oh, Tae-Sik⋅Park, Minseo and Park, Minseo
Journal of Applied Physics, vol. 124, (no. 21), pp. 215702, 20181207. | Journal Article
 
Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics
Jayawardena, Asanka⋅Jayawardena, Asanka⋅Jayawardena, Asanka⋅Ramamurthy, Rahul P⋅Ramamurthy, Rahul P⋅Ramamurthy, Rahul P.⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C.⋅Morisette, Dallas⋅Morisette, Dallas⋅Morisette, Dallas⋅Dhar, Sarit⋅Dhar, Sarit and Dhar, Sarit
Applied Physics Letters, vol. 112, (no. 19), pp. 192108, 20180507. | Journal Article
 
Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs
Ahyi, Ayayi Claude⋅Dhar, Sarit⋅Jayawardena, Asanka⋅Liu, Gang⋅Shaw, Rob G⋅Ahyi, Ayayi Claude⋅Dhar, Sarit⋅Jayawardena, Asanka⋅Liu, Gang and Shaw, Rob G
Materials Science Forum, vol. 924, pp. 448, 20180605. | Journal Article
2017
Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
Khanal, Min P⋅Khanal, Min P⋅Ozden, Burcu⋅Ozden, Burcu⋅Kim, Kyunghyuk⋅Kim, Kyunghyuk⋅Uprety, Sunil⋅Uprety, Sunil⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Yapabandara, Kosala⋅Yapabandara, Kosala⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Park, Minseo and Park, Minseo
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 35, (no. 3), pp. 3, 20170500. | Journal Article
2016
Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$β-Ga2O3Schottky diodes
Jayawardena, Asanka⋅Jayawardena, Asanka⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Dhar, Sarit and Dhar, Sarit
Semiconductor Science and Technology, vol. 31, (no. 11), pp. 115002, 2016-11-01. | Journal Article
 
Dual-gate FET with a coplanar-gate engineering
Jiang, Jie⋅Ahyi, Ayayi and Dhar, Sarit
IEEE Transactions on Electron Devices, vol. 63, (no. 2), pp. 573, 20160201. | Journal Article
 
Dual-Gate MoS2FET With a Coplanar-Gate Engineering
Jiang, Jie⋅Ahyi, Ayayi C and Dhar, Sarit
IEEE Transactions on Electron Devices, vol. 63, (no. 2), pp. 577, 2016-02-00. | Journal Article
 
Dual-Gate MoS₂ FET With a Coplanar-Gate Engineering
Jiang, Jie⋅Ahyi, Ayayi C and Dhar, Sarit
(pp. 573-577). IEEE
 
Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
Armstrong, Andrew M⋅Armstrong, Andrew M⋅Crawford, Mary H⋅Crawford, Mary H⋅Jayawardena, Asanka⋅Jayawardena, Asanka⋅Ahyi, Ayayi⋅Ahyi, Ayayi⋅Dhar, Sarit and Dhar, Sarit
Journal of Applied Physics, vol. 119, (no. 10), pp. 103102, 20160314. | Journal Article
 
SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits
Akturk, Akin⋅Goldsman, Neil⋅Ahyi, Ahayi⋅Dhar, Sarit⋅Cusack, Brendan and Park, Minseo
(pp. -in press-)
 
Time-Resolved Photocurrent Spectroscopic Diagnostics of Electrically Active Defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) Structure Grown on Si Wafers
Ozden, Burcu⋅Ozden, Burcu⋅Khanal, Min P⋅Khanal, Min P⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Yapabandara, Kosala⋅Yapabandara, Kosala⋅Yang, Chungman⋅Yang, Chungman⋅Ko, Sangjong⋅Ko, Sangjong⋅Youn, Suhyeon⋅Youn, Suhyeon⋅Hamilton, Michael C⋅Hamilton, Michael C⋅Sk, Mobbassar Hassan⋅Sk, Mobbassar Hassan⋅Ahyi, Ayayi Claude⋅Ahyi, Ayayi Claude⋅Park, Minseo and Park, Minseo
Journal of Nanoscience and Nanotechnology, vol. 16, (no. 7), pp. 7634, 2016-07-01. | Journal Article
2015
Channel mobility and threshold voltage characterization of 4H-SiC MOSFET with antimony channel implantation
Zheng, Yongju⋅Isaacs-Smith, T⋅Ahyi, AC⋅Dhar, S and Mooney, PM
(pp. 253–256)
 
Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing
Ahyi, Ayayi Claude⋅Feldman, L.C⋅Dhar, Sarit⋅Zheng, Y⋅Modic, Aaron⋅Liu, Gang⋅Jiao, C⋅Ahyi, Ayayi Claude⋅Feldman, L.C⋅Dhar, Sarit⋅Zheng, Y⋅Modic, Aaron⋅Liu, Gang and Jiao, C
Materials Science Forum, vol. 821-823, pp. 696, 20150630. | Journal Article
 
Chitosan solid electrolyte as electric double layer in multilayer MoS2transistor for low-voltage operation
Jiang, Jie⋅Jiang, Jie⋅Jiang, Jie⋅Jiang, Jie⋅Kuroda, Marcelo A⋅Kuroda, Marcelo A⋅Kuroda, Marcelo A⋅Kuroda, Marcelo A⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Isaacs-Smith, Tamara⋅Isaacs-Smith, Tamara⋅Isaacs-Smith, Tamara⋅Isaacs-Smith, Tamara⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Park, Minseo⋅Park, Minseo⋅Park, Minseo⋅Park, Minseo⋅Dhar, Sarit⋅Dhar, Sarit⋅Dhar, Sarit and Dhar, Sarit
physica status solidi (a), vol. 212, (no. 10), pp. 2225, 2015-10-00. | Journal Article
 
Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low-voltage operation
Jiang, Jie⋅Kuroda, Marcelo A⋅Ahyi, Ayayi C⋅Isaacs-Smith, Tamara⋅Mirkhani, Vahid⋅Park, Minseo and Dhar, Sarit
(pp. 2219–2225). Wiley Online Library
 
Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC (0001) interface
Xu, Y⋅Xu, C⋅Liu, G⋅Lee, HD⋅Shubeita, SM⋅Jiao, C⋅Modic, A⋅Ahyi, AC⋅Sharma, Y⋅Wan, A and others
(pp. 235303). AIP Publishing
 
Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]
Ozden, Burcu⋅Ozden, Burcu⋅Yang, Chungman⋅Yang, Chungman⋅Tong, Fei⋅Tong, Fei⋅Khanal, Min P⋅Khanal, Min P⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Sk, Mobbassar Hassan⋅Sk, Mobbassar Hassan⋅Ahyi, Ayayi Claude⋅Ahyi, Ayayi Claude⋅Park, Minseo and Park, Minseo
Applied Physics Letters, vol. 106, (no. 21), pp. 219902, 2015-05-25. | Journal Article