41 Publications (Page 1 of 2)
2019
Characterization of Near-Interface Traps at Dielectric/SiC Interfaces Using CCDLTS
Morisette, Dallas⋅Dhar, Sarit⋅Jayawardena, Asanka⋅Jayawardhena, Isanka⋅Jayawardhena, Isanka⋅Jiao, Chun Kun⋅Jayawardena, Asanka⋅Jiao, Chun Kun⋅Morisette, Dallas and Dhar, Sarit
Materials Science Forum, vol. 963, pp. 221, 2019-07-00. | Journal Article
2018
Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS
Taillon, Joshua A⋅Klingshirn, Christopher J⋅Jiao, Chunkun⋅Zheng, Yongju⋅Dhar, Sarit⋅Zheleva, Tsvetanka S⋅Lelis, Aivars J and Salamanca-Riba, Lourdes G
Applied Physics Letters, vol. 113, (no. 19), pp. 193503, 20181105. | Journal Article
 
Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs
Zheng, Yong Ju⋅Dhar, Sarit⋅Isaacs-Smith, Tamara⋅Ahyi, Ayayi Claude⋅Zheng, Yong Ju⋅Dhar, Sarit⋅Isaacs-Smith, Tamara and Ahyi, Ayayi Claude
Materials Science Forum, vol. 924, pp. 505, 20180605. | Journal Article
 
Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics
Jayawardena, Asanka⋅Jayawardena, Asanka⋅Jayawardena, Asanka⋅Ramamurthy, Rahul P⋅Ramamurthy, Rahul P⋅Ramamurthy, Rahul P.⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C.⋅Morisette, Dallas⋅Morisette, Dallas⋅Morisette, Dallas⋅Dhar, Sarit⋅Dhar, Sarit and Dhar, Sarit
Applied Physics Letters, vol. 112, (no. 19), pp. 192108, 20180507. | Journal Article
 
Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs
Ahyi, Ayayi Claude⋅Dhar, Sarit⋅Jayawardena, Asanka⋅Liu, Gang⋅Shaw, Rob G⋅Ahyi, Ayayi Claude⋅Dhar, Sarit⋅Jayawardena, Asanka⋅Liu, Gang and Shaw, Rob G
Materials Science Forum, vol. 924, pp. 448, 20180605. | Journal Article
 
Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation
Jayawardena, Asanka⋅Shen, X⋅Mooney, P M and Dhar, Sarit
Semiconductor Science and Technology, vol. 33, (no. 6), pp. 65005, 2018-06-01. | Journal Article
2016
Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$β-Ga2O3Schottky diodes
Jayawardena, Asanka⋅Jayawardena, Asanka⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Dhar, Sarit and Dhar, Sarit
Semiconductor Science and Technology, vol. 31, (no. 11), pp. 115002, 2016-11-01. | Journal Article
 
Effects of antimony on electron trapping near SiO.sub.2/4H-SiC interfaces
Dhar, Sarit⋅Mooney, P.⋅Jiang, Zenan⋅Basile, A. and Zheng, Yongju
Journal of Applied Physics, vol. 120, (no. 3), 20160721. | Journal Article
 
Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces
Mooney, P.⋅Jiang, Zenan⋅Basile, A.⋅Zheng, Yongju and Dhar, Sarit
Journal of Applied Physics, vol. 120, (no. 3), 2016-07-21. | Journal Article
 
Tuning the threshold voltage from depletion to enhancement mode in a multilayer MoS2 transistor via oxygen adsorption and desorption
Jiang, Jie and Dhar, Sarit
Physical chemistry chemical physics : PCCP, vol. 18, (no. 2), pp. 689, 2016-Jan-14. | Journal Article
2015
Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices
Shen, Xiao⋅Dhar, Sarit and Pantelides, Sokrates T
Applied Physics Letters, vol. 106, (no. 14), pp. 143504, 2015-04-06. | Journal Article
 
Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing
Ahyi, Ayayi Claude⋅Feldman, L.C⋅Dhar, Sarit⋅Zheng, Y⋅Modic, Aaron⋅Liu, Gang⋅Jiao, C⋅Ahyi, Ayayi Claude⋅Feldman, L.C⋅Dhar, Sarit⋅Zheng, Y⋅Modic, Aaron⋅Liu, Gang and Jiao, C
Materials Science Forum, vol. 821-823, pp. 696, 20150630. | Journal Article
 
Chitosan solid electrolyte as electric double layer in multilayer MoS2transistor for low-voltage operation
Jiang, Jie⋅Jiang, Jie⋅Jiang, Jie⋅Jiang, Jie⋅Kuroda, Marcelo A⋅Kuroda, Marcelo A⋅Kuroda, Marcelo A⋅Kuroda, Marcelo A⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Isaacs-Smith, Tamara⋅Isaacs-Smith, Tamara⋅Isaacs-Smith, Tamara⋅Isaacs-Smith, Tamara⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Park, Minseo⋅Park, Minseo⋅Park, Minseo⋅Park, Minseo⋅Dhar, Sarit⋅Dhar, Sarit⋅Dhar, Sarit and Dhar, Sarit
physica status solidi (a), vol. 212, (no. 10), pp. 2225, 2015-10-00. | Journal Article
 
Silicon carbide: A unique platform for metal-oxide-semiconductor physics
Liu, Gang⋅Tuttle, Blair R and Dhar, Sarit
Applied Physics Reviews, vol. 2, (no. 2), pp. 21307, 2015-06-00. | Journal Article
 
The channel mobility problem in SiC metal-oxide-semiconductor technology
Dhar, Sarit
Journal of the Alabama Academy of Science, vol. 86, (no. 2), pp. 121, 20150401. | Journal Article
 
Tuning the threshold voltage from depletion to enhancement mode in a multilayer MoS2 transistor via oxygen adsorption and desorption
Jiang, Jie and Dhar, Sarit
Physical chemistry chemical physics : PCCP, vol. 18, (no. 2), pp. 689, 20151223. | Journal Article
2014
High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping
Modic, Aaron⋅Modic, Aaron⋅Modic, Aaron⋅Liu, Gang⋅Liu, Gang⋅Liu, Gang⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Zhou, Yuming⋅Zhou, Yuming⋅Zhou, Yuming⋅Xu, Pingye⋅Xu, Pingye⋅Xu, Pingye⋅Hamilton, Michael C⋅Hamilton, Michael C⋅Hamilton, Michael C⋅Williams, John R⋅Williams, John R⋅Williams, John R⋅Feldman, Leonard C⋅Feldman, Leonard C⋅Feldman, Leonard C⋅Dhar, Sarit⋅Dhar, Sarit and Dhar, Sarit
IEEE Electron Device Letters, vol. 35, (no. 9), pp. 896, 2014-Sept.. | Journal Article
 
High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
Lichtenwalner, Daniel J⋅Lichtenwalner, Daniel J⋅Cheng, Lin⋅Cheng, Lin⋅Dhar, Sarit⋅Dhar, Sarit⋅Agarwal, Anant⋅Agarwal, Anant⋅Palmour, John W and Palmour, John W
Applied Physics Letters, vol. 105, (no. 18), pp. 182107, 2014-11-03. | Journal Article
 
Kinetics of nitrogen incorporation at the SiO.sub.2/4H-SiC interface during an NO passivation
Chen, Zengjun⋅Chen, Zengjun⋅Xu, Yi⋅Xu, Yi⋅Garfunkel, Eric⋅Garfunkel, Eric⋅Feldman, Leonard⋅Feldman, Leonard C.⋅Buyuklimanli, Temel⋅Buyuklimanli, Temel⋅Ou, Wei⋅Ou, Wei⋅Serfass, Jeff⋅Serfass, Jeff⋅Wan, Alan⋅Wan, Alan⋅Dhar, Sarit and Dhar, Sarit
Applied Surface Science, vol. 317, pp. 593, 20141030. | Journal Article
 
Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers
Liu, Peizhi⋅Liu, Peizhi⋅Li, Guoliang⋅Li, Guoliang⋅Duscher, Gerd⋅Duscher, Gerd⋅Sharma, Yogesh⋅Sharma, Yogesh⋅Ahyi, Ayayi⋅Ahyi, Ayayi⋅Isaacs-Smith, Tamara⋅Isaacs-Smith, Tamara⋅Williams, John⋅Williams, John⋅Dhar, Sarit and Dhar, Sarit
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, vol. 32, (no. 6), 2014-11-01. | Journal Article
 
Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides
Sharma, Yogesh K⋅Williams, John R⋅Thomas, S.M⋅Dhar, Sarit⋅Mawby, P⋅Ahyi, A.C⋅Issacs-Smith, Tamara and Jennings, M.R
Materials Science Forum, vol. 806, pp. 142, 20141031. | Journal Article
 
Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties
Liu, Gang⋅Xu, Can⋅Yakshinskiy, Boris⋅Wielunski, Leszek⋅Gustafsson, Torgny⋅Bloch, Joseph⋅Dhar, Sarit and Feldman, Leonard C
Applied Physics Letters, vol. 105, (no. 19), pp. 191602, 2014-11-10. | Journal Article
2012
4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics
Rumyantsev, Sergey L⋅Agarwal, Anant K⋅Levinshtein, Michael E⋅Shur, Michael S⋅Palmour, John W⋅Rumyantsev, Sergey L⋅Dhar, Sarit⋅Ivanov, Pavel A⋅Shur, Michael S⋅Levinshtein, Michael E⋅Ivanov, Pavel A⋅Palmour, John W⋅Agarwal, Anant K and Dhar, Sarit
Materials Science Forum, vol. 717-720, pp. 1108, 20120514. | Journal Article
 
Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications
Dhar, Sarit⋅Cheng, Lin⋅Capell, Craig⋅Agarwal, Anant K⋅Burk, Albert A⋅O'Loughlin, Michael J⋅Ryu, Sei Hyung⋅Palmour, John W⋅Callanan, Robert⋅Scozzie, Charles J⋅Lelis, Aivars J⋅Ryu, Sei Hyung⋅Jonas, Charlotte⋅Cheng, Lin⋅Dhar, Sarit⋅Capell, Craig⋅Jonas, Charlotte⋅Callanan, Robert⋅O'Loughlin, Michael J⋅Burk, Albert A⋅Lelis, Aivars J⋅Scozzie, Charles J⋅Agarwal, Anant K and Palmour, John W
Materials Science Forum, vol. 717-720, pp. 1064, 20120514. | Journal Article
 
Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C
Cheng, Lin⋅Cheng, Lin⋅Agarwal, Anant⋅Agarwal, Anant⋅Dhar, Sarit⋅Dhar, Sarit⋅Ryu, Sei-Hyung⋅Ryu, Sei-Hyung⋅Palmour, John and Palmour, John
Journal of Electronic Materials, vol. 41, (no. 5), pp. 914, 20120500. | Journal Article