56 Publications (Page 2 of 3)
2002
Wet Chemical Etching of AlN Single Crystals
Zhuan, D.⋅Edgar, James H⋅Liu, Lianghong⋅Liu, B. and Walker, L.
MRS Internet Journal of Nitride Semiconductor Research, vol. 7, pp. 1, 2002. | Journal Article
 
Wet Chemical Etching of AlN Single Crystals
Zhuan, D.⋅Edgar, James H⋅Liu, Lianghong⋅Liu, B. and Walker, L.
MRS Internet Journal of Nitride Semiconductor Research, vol. 7, pp. 1, 2002. | Journal Article
 
WET CHEMICAL ETCHING OF AlN SINGLE CRYSTALS
Zhuang, D.⋅Edgar, James H⋅Liu, L.⋅Liu, B. and Walker, L.
MRS Internet J.Nitride Semicond.Res. Vol. 7, vol. 7, pp. 4, 2002. | Journal Article
2001
Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
Liu, Lianghong⋅Liu, B.⋅Shi, Y. and Edgar, James H
MRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001. | Journal Article
 
Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
Liu, Lianghong⋅Liu, B.⋅Shi, Y. and Edgar, James H
MRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001. | Journal Article
 
GROWTH MODE AND DEFECTS IN ALUMINUM NITRIDE SUBLIMED ON (0001) 6H-SiC SUBSTRATES
Liu, L.⋅Liu, B.⋅Shi, Y. and Edgar, James H
MRS Internet J.Nitride Semicond.Res. Vol. 6, vol. 6, pp. 7, 2001. | Journal Article
 
MOVPE Reactor for Deposition of Wide Band Gap Semiconductors
Edgar, James H
2001. | Journal Article
 
MOVPE Reactor for Deposition of Wide Band Gap Semiconductors
Edgar, James H
2001. | Journal Article
 
New Technique for Sublimation Growth of AlN Single Crystals
Shi, Y.⋅Liu, B.⋅Liu, Lianghong⋅Edgar, James H⋅Payzant, E. A⋅Haves, J. M and Kuball, Martin
MRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001. | Journal Article
 
New Technique for Sublimation Growth of AlN Single Crystals
Shi, Y.⋅Liu, B.⋅Liu, Lianghong⋅Edgar, James H⋅Payzant, E. A⋅Haves, J. M and Kuball, Martin
MRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001. | Journal Article
 
New Technique for Sublimation Growth of AlN Single Crystals
Shi, Y.⋅Liu, B.⋅Liu, Lianghong⋅Edgar, James H⋅Payzant, E. A⋅Haves, J. M and Kuball, Martin
MRS Internet Journal of Nitride Semiconductor Research, vol. 6, pp. 1, 2001. | Journal Article
 
NEW TECHNIQUE FOR SUBLIMATION GROWTH OF AlN SINGLE CRYSTALS
Shi, Y.⋅Liu, B.⋅Liu, L.⋅Edgar, James H⋅Payzant, E. A and Hayes, J. M
MRS Internet J.Nitride Semicond.Res. Vol. 6, vol. 6, pp. 5, 2001. | Journal Article
2000
MOCVD GROWTH OF CUBIC GaN ON 3C-SiC DEPOSITED ON Si (100) SUBSTRATES
Wei, C. H⋅Xie, Z. Y⋅Li, L. Y⋅Yu, Q. M and Edgar, James H
Journal of Electronic Materials, vol. 29, (no. 3), pp. 317-321, 2000. | Journal Article
 
MOCVD growth of cubic GaN on 3C-SiC deposted on Si(100)substrates
C.H. Wei, Z.Y. Xie, L.Y. Li, Q.M. Yu, and J.H. Edgar and Edgar, James H
(pp. 317). 2000
 
Role of trimethylgallium flow during nucleation layer deposition in the optimization of epitaxial GaN films
Wei, C. H⋅Edgar, James H⋅Ignatiev, C. and Chaudhuri, Jharna
Thin Solid Films, vol. 360, (no. 1-2), pp. 34-38, 2000. | Journal Article
 
Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD
Xie, Zy⋅Wei, C. H⋅Chen, S. F⋅Jiang, Shaoyi and Edgar, James H
Journal of Electronic Materials, vol. 29, (no. 4), pp. 411, Apr 2000. | Journal Article
 
TEMPERATURE DEPENDENCE OF THE PHONONS OF BULK AlN
Hayes, J. M⋅Kuball, M.⋅Shi, Y. and Edgar, James H
Jpn.J.Appl.Phys, vol. 39, (no. 7B), pp. L710-L712, 2000. | Journal Article
 
Transport effects in the sublimation of growth of aluminum nitride
Edgar, James H and Liu, L.
Journal of Crystal Growth (Netherlands), vol. 220, (no. 3), pp. 243-253, 2000. | Journal Article
1999
Effects of surface preparation on epitaxial GaN on 6H-SiC deposited via MOCVD
Xie, Z. Y⋅Wei, C. H⋅Li, L. Y⋅Edgar, James H⋅Chaudhuri, Jharna and Ignatiev, C.
GaN and related alloys; Proceedings of the Symposium, Boston, MA; UNITED STATES; 30 Nov.-4 Dec. 1998. 1999. | Conference Proceeding
 
EFFECTS OF SURFACE PREPARATION ON EPITAXIAL GaN ON 6H-SiC DEPOSITED VIA MOCVD
Xie, Z. Y⋅Wei, C. H⋅Li, L. Y⋅Edgar, James H⋅Chaudhuri, Jharna and Ignatiev, C.
1999. | Journal Article
 
Growth and characterization of B(x)Ga(1-x)N on 6H-SiC (0001) by MOVPE
Wei, C. H⋅Xie, Z. Y⋅Edgar, James H⋅Zeng, K. C⋅Lin, J. Y⋅Jiang, H. X⋅Ignatiev, C.⋅Chaudhuri, Jharna and Braski, D. N
GaN and related alloys; Proceedings of the Symposium, Boston, MA; UNITED STATES; 30 Nov.-4 Dec. 1998. 1999. | Conference Proceeding
1998
Selective epitaxial growth of silicon carbide on SiO2 masked Si(100): the effects of temperature
J.H. Edgar, Y. Gao, J. Chaudhuri, S. Cheema, S.A. Casalnuovo, and P.W. Yip and Edgar, James H
(pp. 201). 1998
 
The effects of the simultaneous addition of diborane and ammonia on the hot-filament assisted chemical vapor deposition of diamond II Characterization of diamond and BCN film
Z.Y. Xie, J.H. Edgar, T.L. McCormick, and M.V. Sidorov and Edgar, James H
(pp. 1357). 1998
1997
c-Boron-aluminum nitride alloys prepared by ion-beam assisted deposition
Edgar, James H⋅Smith, D. T⋅Eddy, C. R⋅Carosella, C. A and Sartwell, B. D
Thin Solid Films, vol. 298, (no. 1-2), pp. 33-38, 1997. | Journal Article
 
HARDNESS, ELASTIC MODULUS AND STRUCTURE OF INDIUM NITRIDE THIN FILMS ON AlN-NUCLEATED SAPPHIRE SUBSTRATES
Edgar, James H⋅WCA⋅Wei, C. H⋅Smith, D. T⋅Kistenmacher, T. J and Bryden, W. A
Journal of Materials Science: Materials in Electronics, vol. 8, (no. 5), pp. 307-312, 1997. | Journal Article