46 Publications (Page 2 of 2)
2014
Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si
Ozden, Burcu⋅Ozden, Burcu⋅Yang, Chungman⋅Yang, Chungman⋅Tong, Fei⋅Tong, Fei⋅Khanal, Min P⋅Khanal, Min P⋅Mirkhani, Vahid⋅Mirkhani, Vahid⋅Sk, Mobbassar Hassan⋅Sk, Mobbassar Hassan⋅Ahyi, Ayayi Claude⋅Ahyi, Ayayi Claude⋅Park, Minseo and Park, Minseo
Applied Physics Letters, vol. 105, (no. 17), pp. 172105, 2014-10-27. | Journal Article
 
High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping
Modic, Aaron⋅Modic, Aaron⋅Modic, Aaron⋅Liu, Gang⋅Liu, Gang⋅Liu, Gang⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Zhou, Yuming⋅Zhou, Yuming⋅Zhou, Yuming⋅Xu, Pingye⋅Xu, Pingye⋅Xu, Pingye⋅Hamilton, Michael C⋅Hamilton, Michael C⋅Hamilton, Michael C⋅Williams, John R⋅Williams, John R⋅Williams, John R⋅Feldman, Leonard C⋅Feldman, Leonard C⋅Feldman, Leonard C⋅Dhar, Sarit⋅Dhar, Sarit and Dhar, Sarit
IEEE Electron Device Letters, vol. 35, (no. 9), pp. 896, 2014-Sept.. | Journal Article
 
Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers
Liu, Peizhi⋅Liu, Peizhi⋅Li, Guoliang⋅Li, Guoliang⋅Duscher, Gerd⋅Duscher, Gerd⋅Sharma, Yogesh⋅Sharma, Yogesh⋅Ahyi, Ayayi⋅Ahyi, Ayayi⋅Isaacs-Smith, Tamara⋅Isaacs-Smith, Tamara⋅Williams, John⋅Williams, John⋅Dhar, Sarit and Dhar, Sarit
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, vol. 32, (no. 6), 2014-11-01. | Journal Article
 
Thin PSG Process for 4H-SiC MOSFET
Feldman, Leonard C⋅Sharma, Yogesh K⋅Thomas, Stpehen M⋅Mawby, Philip A⋅Williams, John⋅Dhar, Sarit⋅Xu, Yi⋅Jennings, Michael R⋅Modic, Aaron⋅Fisher, Craig⋅Isaacs-Smith, Tamara⋅Granfukel, Eric and Ahyi, Ayayi C
Materials Science Forum, vol. 778-780, pp. 516, 20140226. | Journal Article
2012
Flexible organic/inorganic hybrid solar cells based on conjugated polymer and ZnO nanorod array
Tong, Fei⋅Tong, Fei⋅Tong, Fei⋅Kim, Kyusang⋅Kim, Kyusang⋅Kim, Kyusang⋅Martinez, Daniel⋅Martinez, Daniel⋅Martinez, Daniel⋅Thapa, Resham⋅Thapa, Resham⋅Thapa, Resham⋅Ahyi, Ayayi⋅Ahyi, Ayayi⋅Ahyi, Ayayi⋅Williams, John⋅Williams, John⋅Williams, John⋅Kim, Dong Joo⋅Kim, Dong-Joo⋅Kim, Dong-Joo⋅Lee, Sungkoo⋅Lee, Sungkoo⋅Lee, Sungkoo⋅Lim, Eunhee⋅Lim, Eunhee⋅Lim, Eunhee⋅Lee, Kyeong K⋅Lee, Kyeong K⋅Lee, Kyeong K⋅Park, Minseo⋅Park, Minseo and Park, Minseo
Semiconductor Science and Technology, vol. 27, (no. 10), pp. 105005, 2012-10-10. | Journal Article
 
Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution Concentration
Tong, Fei⋅Tong, Fei⋅Tong, Fei⋅Kim, Kyusang⋅Kim, Kyusang⋅Kim, Kyusang⋅Wang, Yaqi⋅Wang, Yaqi⋅Wang, Yaqi⋅Thapa, Resham⋅Thapa, Resham⋅Thapa, Resham⋅Sharma, Yogesh⋅Sharma, Yogesh⋅Sharma, Yogesh⋅Modic, Aaron⋅Modic, Aaron⋅Modic, Aaron⋅Ahyi, Ayayi⋅Ahyi, Ayayi⋅Ahyi, Ayayi⋅Issacs-Smith, Tamara⋅Issacs-Smith, Tamara⋅Issacs-Smith, Tamara⋅Williams, John⋅Williams, John⋅Williams, John⋅Ahn, Hosang⋅Ahn, Hosang⋅Ahn, Hosang⋅Park, Hyejin⋅Park, Hyejin⋅Park, Hyejin⋅Kim, Dong-Joo⋅Kim, Dong Joo⋅Kim, Dong-Joo⋅Lee, Sungkoo⋅Lee, Sungkoo⋅Lee, Sungkoo⋅Lim, Eunhee⋅Lim, Eunhee⋅Lim, Eunhee⋅Lee, Kyeong⋅Lee, Kyeong⋅Lee, Kyeong⋅Park, Minseo⋅Park, Minseo and Park, Minseo
ISRN Nanomaterials, vol. 2012, pp. 7, 2012. | Journal Article
 
Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
Ahyi, Ayayi Claude⋅Agarwal, Anant K⋅Williams, John R⋅Dhar, Sarit⋅Dhar, Sarit⋅Ryu, Sei Hyung⋅Agarwal, Anant K⋅Williams, John R⋅Dhar, Sarit⋅Ryu, Sei Hyung⋅Ahyi, Ayayi Claude⋅Ahyi, Ayayi Claude⋅Williams, John R⋅Ryu, Sei Hyung and Agarwal, Anant K
Materials Science Forum, vol. 717-720, pp. 716, 20120514. | Journal Article
 
The Effects of Phosphorus at the SiO2/4H-SiC Interface
Ahyi, Ayayi Claude⋅Pantelides, Sokrates T⋅Issacs-Smith, Tamara⋅Shen, Xiao⋅Feldman, Leonard C⋅Zhu, Xing Guang⋅Williams, John R⋅Garfunkel, Eric⋅Rozen, John⋅Xu, Yi⋅Sharma, Yogesh K⋅Ahyi, Ayayi Claude⋅Issacs-Smith, Tamara⋅Shen, Xiao⋅Zhu, Xing Guang⋅Garfunkel, Eric⋅Sharma, Yogesh K.⋅Rozen, John⋅Xu, Yi⋅Pantelides, Sokrates T.⋅Williams, John R. and Feldman, Leonard C.
Materials Science Forum, vol. 717-720, pp. 746, 20120514. | Journal Article
2011
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices
Zhu, Xingguang⋅Ahyi, Ayayi C⋅Li, Mingyu⋅Chen, Zengjun⋅Rozen, John⋅Feldman, Leonard C and Williams, John R
Solid State Electronics, vol. 57, (no. 1), pp. 79, 2011. | Journal Article
2010
Ambient temperature characteristics of Schottky contacts on 4H–SiC aged in air at 350 °C
Adedeji, Adetayo V⋅Adedeji, Adetayo V⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Williams, John R⋅Williams, John R⋅Mohney, Suzanne E⋅Mohney, Suzanne E⋅Schofield, James D and Scofield, James D
Solid State Electronics, vol. 54, (no. 7), pp. 740, 2010. | Journal Article
 
Structure and stoichiometry of (0001) 4H-SiC/oxide interface
Zhu, Xingguang⋅Zhu, Xingguang⋅Lee, Hang⋅Lee, Hang⋅Feng, Tian⋅Feng, Tian⋅Ahyi, Ayayi⋅Ahyi, Ayayi⋅Mastrogiovanni, Daniel⋅Mastrogiovanni, Daniel⋅Wan, Alan⋅Wan, Alan⋅Garfunkel, Eric⋅Garfunkel, Eric⋅Williams, John⋅Williams, John⋅Gustafsson, Torgny⋅Gustafsson, Torgny⋅Feldman, Leonard and Feldman, Leonard
Applied Physics Letters, vol. 97, (no. 7), pp. 071908-3, 2010-08-19. | Journal Article
 
The Limits of Post Oxidation Annealing in NO
Rozen, John⋅Ahyi, Ayayi Claude⋅Feldman, Leonard C⋅Zhu, Xing Guang and Williams, John R
Materials Science Forum, vol. 645-648, pp. 696, 20100429. | Journal Article
2007
Measurement of ultrashort laser pulses using single-crystal films of 4-aminobenzophenone
Bhowmik, Achintya K⋅Tan, Shida⋅Ahyi, Ayayi C⋅Dharmadhikari, J.A⋅Dharmadhikari, A.K and Mathur, D
Optics Communications, vol. 280, (no. 2), pp. 476, 2007. | Journal Article
2006
Composite Ohmic Contacts to SiC
Ahyi, Ayayi Claude⋅Adedeji, A.V⋅Bozack, M.J⋅Williams, John R⋅Liu, B⋅Scofield, James D and Mohney, S.E
Materials Science Forum, vol. 527-529, pp. 882, 20061015. | Journal Article
 
Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs
Ahyi, Ayayi Claude⋅Williams, John R and Wang, S.R
Materials Science Forum, vol. 527-529, pp. 1066, 20061015. | Journal Article
 
Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface
Wang, S.R⋅Pantelides, Sokrates T⋅Feldman, Leonard C⋅Dhar, S⋅Williams, John R⋅Isaacs-Smith, Tamara⋅Dhar, Sarit⋅Ahyi, Ayayi Claude⋅Wang, S.⋅Ahyi, A. C⋅Isaacs-Smith, T.⋅Pantelides, St⋅Williams, J. R and Feldman, L. C
Materials Science Forum, vol. 527-529, pp. 954, 20061015. | Journal Article
2004
The effects of radiation type on the tolerance of high power 4h-SiC diodes
Z. Luo and Ahyi, Ayayi C
IEEE ttransactions on nuclear science, vol. 51, pp. 3748-3752, 2004. | Journal Article
2001
Temporal measurement on and using pulses from narrowed emission in styrylpyridinium cyanine dye
A.K. Dharmadhikari, A.K. Bhowmik, A.C. Ahyi, M. Thakur and Ahyi, Ayayi C
(pp. 3383-3385). November 2001
 
Temporal measurement on and using pulses from spectrally narrowed emission in styrylpyridinium cyanine dye
Dharmadhikari, Aditya K⋅Dharmadhikari, Aditya K⋅Bhowmik, Achintya K⋅Bhowmik, Achintya K⋅Ahyi, Ayayi C⋅Ahyi, Ayayi C⋅Thakur, Mrinal and Thakur, Mrinal
Applied Physics Letters, vol. 79, (no. 21), pp. 3385, 2001-11-19. | Journal Article
1999
acoustic scattering of impulsive geometrical waves by a glass sphere in water
V. latard,A. Merlen, V. Preobrazhenski, A.C. Ahyi and Ahyi, Ayayi C
(pp. 1919-1921). 29 Mar 1999
1998
Experimental demonstration of the pseudo-Rayleigh wave(A0)
A.C. Ahyi, P. Pernod, V. Latard, A. Merlen, H. Uberall and Ahyi, Ayayi C
(pp. 2727-2732). November 1998