46 Publications (Page 1 of 2)
2022
Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
Das, SumanZheng, YongjuAhyi, AyayiKuroda, Marcelo A and Dhar, Sarit
Materials, vol. 15, (no. 19), pp. 6736, Sep 28, 2022. | Journal Article
 
The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors
Wang, S.Uprety, S.Mirkhani, V.Hanggi, D.Yapabandara, K.Khanal, M.P.Ahyi, A.C.Hamilton, M.C.Sk, M.H. and Park, M.
Solid-state electronics, vol. 191, pp. 108270, May 2022. | Journal Article
2021
Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors
Jayawardhena, I. URamamurthy, R. PMorisette, D.Ahyi, A. CThorpe, R.Kuroda, M. AFeldman, L. C and Dhar, S.
Journal of applied physics, vol. 129, (no. 7), Feb 21, 2021. | Journal Article
 
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors
Mirkhani, VahidWang, ShiqiangYapabandara, KosalaSultan, Muhammad SKhanal, Min PUprety, SunilOzden, BurcuHassani, EhsanSchoenek, Benjamin VKim, Dong-JooOh, Tae-SikAhyi, Ayayi CDhar, SaritHamilton, Michael CSk, Mobbassar H and Park, Minseo
Semiconductor science and technology, vol. 36, (no. 10), pp. 105011, Oct 2021. | Journal Article
 
High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors
Das, SumanIsaacs-Smith, TamaraAhyi, AyayiKuroda, Marcelo A and Dhar, Sarit
Journal of applied physics, vol. 130, (no. 22), pp. 225701, Dec 14, 2021. | Journal Article
2019
On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO
Mirkhani, VahidMirkhani, VahidMirkhani, VahidYapabandara, KosalaYapabandara, KosalaYapabandara, KosalaWang, ShiqiangWang, ShiqiangWang, ShiqiangKhanal, Min PrasadKhanal, Min PrasadKhanal, Min PrasadUprety, SunilUprety, SunilUprety, SunilSultan, Muhammad ShehzadSultan, Muhammad ShehzadSultan, Muhammad ShehzadOzden, BurcuOzden, BurcuOzden, BurcuAhyi, Ayayi ClaudeAhyi, Ayayi ClaudeAhyi, Ayayi ClaudeHamilton, Michael CHamilton, Michael CHamilton, Michael CSk, Mobbassar HassanSk, Mobbassar HassanSk, Mobbassar HassanPark, MinseoPark, Minseo and Park, Minseo
Thin Solid Films, vol. 672, pp. 156, 2019-02-28. | Journal Article
 
Reliability Testing of SiC MOS Devices at 500°C
Ahyi, A. CDhar, S.Dilli, Z.Akturk, A.Goldsman, N. and Ghanbari, A.
In 2019 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-4). IEEE. Mar 2019. | Conference Proceeding
2018
Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs
Zheng, Yong JuDhar, SaritIsaacs-Smith, TamaraAhyi, Ayayi ClaudeZheng, Yong JuDhar, SaritIsaacs-Smith, Tamara and Ahyi, Ayayi Claude
Materials Science Forum, vol. 924, pp. 505, 20180605. | Journal Article
 
Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)
Khanal, Min PKhanal, Min PUprety, SunilUprety, SunilMirkhani, VahidMirkhani, VahidWang, ShiqiangWang, ShiqiangYapabandara, KosalaYapabandara, KosalaHassani, EhsanHassani, EhsanIsaacs-Smith, TamaraIsaacs-Smith, TamaraAhyi, Ayayi CAhyi, Ayayi CBozack, Michael JBozack, Michael JOh, Tae-SikOh, Tae-SikPark, Minseo and Park, Minseo
Journal of Applied Physics, vol. 124, (no. 21), pp. 215702, 20181207. | Journal Article
 
Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics
Jayawardena, AsankaJayawardena, AsankaJayawardena, AsankaRamamurthy, Rahul PRamamurthy, Rahul PRamamurthy, Rahul P.Ahyi, Ayayi CAhyi, Ayayi CAhyi, Ayayi C.Morisette, DallasMorisette, DallasMorisette, DallasDhar, SaritDhar, Sarit and Dhar, Sarit
Applied Physics Letters, vol. 112, (no. 19), pp. 192108, 20180507. | Journal Article
 
Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs
Ahyi, Ayayi ClaudeDhar, SaritJayawardena, AsankaLiu, GangShaw, Rob GAhyi, Ayayi ClaudeDhar, SaritJayawardena, AsankaLiu, Gang and Shaw, Rob G
Materials Science Forum, vol. 924, pp. 448, 20180605. | Journal Article
2017
Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
Khanal, Min PKhanal, Min POzden, BurcuOzden, BurcuKim, KyunghyukKim, KyunghyukUprety, SunilUprety, SunilMirkhani, VahidMirkhani, VahidYapabandara, KosalaYapabandara, KosalaAhyi, Ayayi CAhyi, Ayayi CPark, Minseo and Park, Minseo
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 35, (no. 3), pp. 3, 20170500. | Journal Article
2016
Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$β-Ga2O3Schottky diodes
Jayawardena, AsankaJayawardena, AsankaAhyi, Ayayi CAhyi, Ayayi CDhar, Sarit and Dhar, Sarit
Semiconductor Science and Technology, vol. 31, (no. 11), pp. 115002, 2016-11-01. | Journal Article
 
Dual-gate FET with a coplanar-gate engineering
Jiang, JieAhyi, Ayayi and Dhar, Sarit
IEEE Transactions on Electron Devices, vol. 63, (no. 2), pp. 573, 20160201. | Journal Article
 
Dual-Gate MoS2FET With a Coplanar-Gate Engineering
Jiang, JieAhyi, Ayayi C and Dhar, Sarit
IEEE Transactions on Electron Devices, vol. 63, (no. 2), pp. 577, 2016-02-00. | Journal Article
 
Dual-Gate MoS₂ FET With a Coplanar-Gate Engineering
Jiang, JieAhyi, Ayayi C and Dhar, Sarit
(pp. 573-577). IEEE
 
Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
Armstrong, Andrew MArmstrong, Andrew MCrawford, Mary HCrawford, Mary HJayawardena, AsankaJayawardena, AsankaAhyi, AyayiAhyi, AyayiDhar, Sarit and Dhar, Sarit
Journal of Applied Physics, vol. 119, (no. 10), pp. 103102, 20160314. | Journal Article
 
SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits
Akturk, AkinGoldsman, NeilAhyi, AhayiDhar, SaritCusack, Brendan and Park, Minseo
(pp. -in press-)
 
Time-Resolved Photocurrent Spectroscopic Diagnostics of Electrically Active Defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) Structure Grown on Si Wafers
Ozden, BurcuOzden, BurcuKhanal, Min PKhanal, Min PMirkhani, VahidMirkhani, VahidYapabandara, KosalaYapabandara, KosalaYang, ChungmanYang, ChungmanKo, SangjongKo, SangjongYoun, SuhyeonYoun, SuhyeonHamilton, Michael CHamilton, Michael CSk, Mobbassar HassanSk, Mobbassar HassanAhyi, Ayayi ClaudeAhyi, Ayayi ClaudePark, Minseo and Park, Minseo
Journal of Nanoscience and Nanotechnology, vol. 16, (no. 7), pp. 7634, 2016-07-01. | Journal Article
2015
Channel mobility and threshold voltage characterization of 4H-SiC MOSFET with antimony channel implantation
Zheng, YongjuIsaacs-Smith, TAhyi, ACDhar, S and Mooney, PM
(pp. 253–256)
 
Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing
Ahyi, Ayayi ClaudeFeldman, L.CDhar, SaritZheng, YModic, AaronLiu, GangJiao, CAhyi, Ayayi ClaudeFeldman, L.CDhar, SaritZheng, YModic, AaronLiu, Gang and Jiao, C
Materials Science Forum, vol. 821-823, pp. 696, 20150630. | Journal Article
 
Chitosan solid electrolyte as electric double layer in multilayer MoS2transistor for low-voltage operation
Jiang, JieJiang, JieJiang, JieJiang, JieKuroda, Marcelo AKuroda, Marcelo AKuroda, Marcelo AKuroda, Marcelo AAhyi, Ayayi CAhyi, Ayayi CAhyi, Ayayi CAhyi, Ayayi CIsaacs-Smith, TamaraIsaacs-Smith, TamaraIsaacs-Smith, TamaraIsaacs-Smith, TamaraMirkhani, VahidMirkhani, VahidMirkhani, VahidMirkhani, VahidPark, MinseoPark, MinseoPark, MinseoPark, MinseoDhar, SaritDhar, SaritDhar, Sarit and Dhar, Sarit
physica status solidi (a), vol. 212, (no. 10), pp. 2225, 2015-10-00. | Journal Article
 
Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low-voltage operation
Jiang, JieKuroda, Marcelo AAhyi, Ayayi CIsaacs-Smith, TamaraMirkhani, VahidPark, Minseo and Dhar, Sarit
(pp. 2219–2225). Wiley Online Library
 
Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC (0001) interface
Xu, YXu, CLiu, GLee, HDShubeita, SMJiao, CModic, AAhyi, ACSharma, YWan, A and others
(pp. 235303). AIP Publishing
 
Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]
Ozden, BurcuOzden, BurcuYang, ChungmanYang, ChungmanTong, FeiTong, FeiKhanal, Min PKhanal, Min PMirkhani, VahidMirkhani, VahidSk, Mobbassar HassanSk, Mobbassar HassanAhyi, Ayayi ClaudeAhyi, Ayayi ClaudePark, Minseo and Park, Minseo
Applied Physics Letters, vol. 106, (no. 21), pp. 219902, 2015-05-25. | Journal Article