61 Publications (Page 2 of 3)
1996
Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistors
Cressler, John D⋅Vempati, L.⋅Babcock, J. A⋅Jaeger, Richard C and Harame, D. L
IEEE Electron Device Letters, vol. 17, (no. 1), pp. 13-15, 1996. | Journal Article
 
Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors
Vempati, L. S⋅Cressler, John D⋅Babcock, J. A⋅Jaeger, Richard C and Harame, D. L
IEEE Journal of Solid-State Circuits, vol. 31, (no. 10), pp. 1458-1467, 1996. | Journal Article
1995
Effects of stress-induced mismatches on CMOS analog circuits
Jaeger, Richard C⋅Ramani, Ramanathan and Suhling, Jeffrey C
The 1995 International Symposium on VLSI Technology, Systems, and Applications; Taipei; Taiwan; 31 May-02 June 1995. 1995. | Conference Proceeding
 
Evidence for non-equilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures
Richey, David M⋅Joseph, Alvin J⋅Cressler, John D and Jaeger, Richard C
The 1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting; Minneapolis, MN; USA; 01-03 Oct. 1995. 1995. | Conference Proceeding
 
Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's
Babcock, J. A⋅Cressler, John D⋅Vempati, L. S⋅Clark, S. D⋅Jaeger, Richard C and Harame, D. L
IEEE Electron Device Letters, vol. 16, (no. 8), pp. 351-353, 1995. | Journal Article
 
Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD
Babcock, J. A⋅Cressler, John D⋅Vempati, L. S⋅Clark, S. D⋅Jaeger, Richard C and Harame, D. L
IEEE Transactions on Nuclear Science, vol. 42, (no. 6), pp. 1558-1566, 1995. | Journal Article
1994
Errors associated with the design, calibration and application of piezoresistive stress sensors in (100) silicon
Jaeger, Richard C⋅Suhling, Heffrey C and Ramani, Ramanathan
IEEE Transactions on Components, Packaging, and Manufacturing Technology Part B: Advanced Packaging, vol. 17, (no. 1), pp. 97-107, 1994. | Journal Article
1993
Formation of silicon reentrant cavity heat sinks using anisotropic etching and direct wafer bonding.
Goyal, Ajay⋅Jaeger, Richard C⋅Bhavnani, Sushil H⋅Ellis, Charles D⋅Phadke, Narendra K⋅Azimi-Rashti, Mehdi and Goodling, John S
IEEE Electron Device Letters, vol. 14, (no. 1), pp. 29-32, 1993. | Journal Article
 
Integral heat sink for cooling microelectronic components.
Bhavnani, Sushil H⋅Tsai, C-P⋅Jaeger, Richard C and Eison, D. L
Journal of Electronic Packaging, Transactions of the ASME, vol. 115, (no. 3), pp. 284-291, 1993. | Journal Article
 
Piezoresistive sensor chip for measurement of stress in electronic packaging.
Jaeger, Richard C⋅Suhling, Jeffrey C⋅Carey, Martin T and Johnson, Wayne
1993 Proceedings of the 43rd Electronic Components and Technology Conference; Orlando, FL; USA; 01-04 June 1993. 1993. | Conference Proceeding
1992
A high-speed sensing scheme for 1T dynamic RAMs utilizing the clamped bit-line sense amplifier
Blalock, T. N and Jaeger, Richard C
IEEE Journal of Solid-State Circuits, vol. 27, (no. 4), pp. 618-625, 1992. | Journal Article
 
Errors associated with the design and calibration of piezoresistive stress sensors in (100) silicon.
Jaeger, Richard C⋅Suhling, Jeffrey C and Ramani, Ramanathan
ASME, vol. 1, pp. 447-456, 1992. | Journal Article
 
Piezoresistive stress sensors on (110) silicon wafers
Kang, Y. L⋅Suhling, Jeffrey C and Jaeger, Richard C
International Congress on Experimental Mechanics, 7th, Las Vegas, NV; UNITED STATES; 8-11 June 1992. 1992. | Conference Proceeding
1991
A high-speed clamped bit-line current-mode sense amplifier
Blalock, T. N and Jaeger, Richard C
IEEE Journal of Solid-State Circuits, vol. 26, (no. 4), pp. 542-548, 1991. | Journal Article
 
Piezoresistive sensors for measurement of thermally-induced stresses in microelectronics
Suhling, Jeffrey C⋅BEATY, R. E⋅Jaeger, Richard C and Johnson, Wayne
1991 SEM Spring Conference on Experimental Mechanics, Milwaukee, WI; UNITED STATES; 10-13 June 1991. 1991. | Conference Proceeding
1989
BILOW--simulation of low-temperature bipolar device behavior.
Chrzanowska Jeske, Malgorzata and Jaeger, Richard C
IEEE Transactions on Electron Devices, vol. 36, (no. 8), pp. 1475-1488, 1989. | Journal Article
 
Multichip thin-film technology on silicon.
Johnson, Wayne⋅Phillips, T. L⋅Jaeger, Richard C⋅Hahn, S. F and Burdeaux, D. C
IEEE TRANS. COMPONENTS HYBRIDS MANUF. TECHNOL., vol. 12, (no. 2), pp. 185-194, 1989. | Journal Article
1988
A high density anodized aluminum microstrip structure for high speed interconnections
DILLARD, W. C⋅DAVIDSON, J. L and Jaeger, Richard C
Space structures, power, and power conditioning; Proceedings of the Meeting, Los Angeles, CA; UNITED STATES; 11-13 Jan. 1988. 1988. | Conference Proceeding
1987
MOSFET behavior and circuit considerations for analog applications at 77K.
Fox, R. M and Jaeger, Richard C
IEEE Transactions on Electron Devices, vol. ED-34, (no. 1), pp. 114-123, 1987. | Journal Article
 
The temperature dependence of the amplification factor of bipolar-junction transistors
Dillard, W. C and Jaeger, Richard C
IEEE Transactions on Electron Devices, vol. 34, (no. 1), pp. 139-142, 1987. | Journal Article
 
The temperature dependence of the amplification factor of bipolar-junction transistors.
Dillard, W. C and Jaeger, Richard C
IEEE Transactions on Electron Devices, vol. ED-34, (no. 1), pp. 139-142, 1987. | Journal Article
1986
Computer-aided design of one-dimensional MOSFET impurity profiles.
Jaeger, Richard C
IEEE TRANS. COMP. AIDED DESIGN INTEGRATED CIRCUITS SYST., vol. CAD-5, (no. 1), pp. 198-203, 1986. | Journal Article
 
Computer-Aided Design of One-Dimensional MOSFET Impurity Profiles
Jaeger, Richard C
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 5, (no. 1), pp. 198-203, 1986. | Journal Article
 
Silicon hybrid wafer-scale package technology
Davidson, J. L⋅Jaeger, Richard C and Kerns, D. V
IEEE Journal of Solid-State Circuits, vol. 21, (no. 5), pp. 845-851, 1986. | Journal Article
1984
Anomalous MOS capacitance behavior in depletion-mode structures
Jaeger, Richard C and Gaensslen, F. H
IEEE Transactions on Electron Devices, vol. 31, (no. 12), pp. 1916-1918, 1984. | Journal Article