41 Publications (Page 2 of 2)
2012
Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
Ahyi, Ayayi Claude⋅Agarwal, Anant K⋅Williams, John R⋅Dhar, Sarit⋅Dhar, Sarit⋅Ryu, Sei Hyung⋅Agarwal, Anant K⋅Williams, John R⋅Dhar, Sarit⋅Ryu, Sei Hyung⋅Ahyi, Ayayi Claude⋅Ahyi, Ayayi Claude⋅Williams, John R⋅Ryu, Sei Hyung and Agarwal, Anant K
Materials Science Forum, vol. 717-720, pp. 716, 20120514. | Journal Article
2010
A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs
Dhar, Sarit⋅Dhar, Sarit⋅Ryu, Sei-Hyung⋅Ryu, Sei-Hyung⋅Agarwal, Anant K and Agarwal, Anant K
IEEE Transactions on Electron Devices, vol. 57, (no. 6), pp. 1200, 2010-June. | Journal Article
 
Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs
Potbhare, Siddharth⋅Potbhare, Siddharth⋅Akturk, Akin⋅Agarwal, Anant K⋅Potbhare, Siddharth⋅Goldsman, Neil⋅Lelis, Aivars J⋅Dhar, Sarit⋅Akturk, Akin⋅Akturk, A.⋅Goldsman, Neil⋅Goldsman, Neil⋅Lelis, Aivars⋅Lelis, Aivars J⋅Dhar, Sarit⋅Dhar, Sarit⋅Agarwal, Anant and Agarwal, Anant K
Materials Science Forum, vol. 645-648, pp. 978, 20100429. | Journal Article
 
Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
Rozen, John⋅Feldman, Leonard C⋅Chen, X.D⋅Williams, John R⋅Basile, Alberto F⋅Dhar, Sarit and Mooney, Patricia M
Materials Science Forum, vol. 645-648, pp. 502, 20100429. | Journal Article
2009
Critical Issues for MOS Based Power Devices in 4H-SiC
Ryu, Sei Hyung⋅Scozzie, Charles⋅Ryu, Sei Hyung⋅Geil, Bruce⋅Haney, Sarah K⋅Dhar, Sarit⋅Lelis, Aivars J⋅Agarwal, Anant K⋅Dhar, Sarit⋅Haney, Sarah K⋅Agarwal, Anant K⋅Lelis, Aivars J⋅Geil, Bruce and Scozzie, Charles
Materials Science Forum, vol. 615-617, pp. 748, 20090302. | Journal Article
 
Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC
Rozen, John⋅Dhar, Sarit⋅Zvanut, M. E⋅Williams, J. R and Feldman, L. C
Journal of Applied Physics, vol. 105, (no. 12), pp. 124506, 2009-06-15. | Journal Article
 
Density of interface states, electron traps, and hole traps as a function of the nitrogen density in Si[O.sub.2] on SiC
Rozen, John⋅Dhar, Sarit⋅Zvanut, M.E⋅Williams, J.R and Feldman, L.C
Journal of Applied Physics, vol. 105, (no. 12), pp. 124506, 20090615. | Journal Article
 
Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric
Lichtenwalner, Daniel J⋅Lichtenwalner, Daniel J⋅Misra, Veena⋅Misra, Veena⋅Dhar, Sarit⋅Dhar, Sarit⋅Ryu, Sei-Hyung⋅Ryu, Sei-Hyung⋅Agarwal, Anant and Agarwal, Anant
MRS Online Proceedings Library, vol. 1195, 20090101. | Journal Article
 
High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric
Lichtenwalner, Daniel J⋅Lichtenwalner, Daniel J⋅Misra, Veena⋅Misra, Veena⋅Dhar, Sarit⋅Dhar, Sarit⋅Ryu, Sei-Hyung⋅Ryu, Sei-Hyung⋅Agarwal, Anant and Agarwal, Anant
Applied Physics Letters, vol. 95, (no. 15), pp. 152113, 2009-10-12. | Journal Article
2008
Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface
Rozen, John⋅Dhar, Sarit⋅Dixit, S. K⋅Afanas’ev, V. V⋅Roberts, F. O⋅Dang, H. L⋅Wang, Sanwu⋅Pantelides, S. T⋅Williams, J. R and Feldman, L. C
Journal of Applied Physics, vol. 103, (no. 12), pp. 124513, 2008-06-15. | Journal Article
 
Increase in oxide hole trap density associated with nitrogen incorporation at the Si[O.sub.2]/SiC interface
Rozen, John⋅Dhar, Sarit⋅Dixit, S.K⋅Afanas'ev, V.V⋅Roberts, F.O⋅Dang, H.L⋅Pantelides, S.T⋅Wang, Sanwu⋅Williams, J.R and Feldman, L.C
Journal of Applied Physics, vol. 103, (no. 12), pp. 124513, 20080615. | Journal Article
2007
Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC
Rozen, John⋅Dhar, Sarit⋅Pantelides, S. T⋅Feldman, L. C⋅Wang, Sanwu⋅Williams, J. R and Afanas’ev, V. V
Applied Physics Letters, vol. 91, (no. 15), pp. 153503, 2007-10-08. | Journal Article
2006
A novel technique for the fabrication of nanostructures on silicon carbide using amorphization and oxidation
Dhar, Sarit⋅Dhar, Sarit⋅Davis, Ryan P⋅Davis, Ryan⋅Feldman, Leonard C and Feldman, Leonard
Nanotechnology, vol. 17, (no. 17), pp. 4518, 20060914. | Journal Article
 
Total dose radiation response of nitrided and non-nitrided Si[O.sub.2]/ 4H-SiC MOS capacitors
Dixit, Sriram⋅Dhar, Sarit⋅Rozen, John⋅Wang, Sanwu⋅Schrimpf, Ronald⋅Fleetwood, Daniel⋅Pantelides, Sokrates⋅Williams, John. and Feldman, Leonard
IEEE Transactions on Nuclear Science, vol. 53, (no. 6), pp. 3687, 20061201. | Journal Article
2005
Interface Passivation for Silicon Dioxide Layers on Silicon Carbide
Dhar, Sarit⋅Dhar, Sarit⋅Wang, Shurui⋅Wang, Shurui⋅Williams, John R⋅Williams, John R⋅Pantelides, Sokrates T⋅Pantelides, Sokrates T⋅Feldman, Leonard C and Feldman, Leonard C
MRS Bulletin, vol. 30, (no. 4), pp. 292, 20050401. | Journal Article
 
Nitrogen and hydrogen induced trap passivation at the silicon dioxide/4H-silicon carbide interface (Dissertation)
Dhar, Sarit (2005).